RU1H35K n-channel advanced power mosfet symbol rating unit v dss 100 v gss 25 t j 175 c t stg -55 to 175 c i s t c =25c 40 a i dp t c =25c 160 a t c =25c 40 t c =100c 30 t c =25c 97 t c =100c 48 r jc 1.55 c/w r ja 100 c/w e as 90 mj ruichips semiconductor co., ltd rev. a? apr., 2013 1 www.ruichips.com maximum junction temperature storage temperature range thermal resistance-junction to case drain-source avalanche ratings avalanche energy, single pulsed diode continuous forward current 300s pulse drain current tested continuous drain current(v gs =10v) maximum power dissipation mounted on large heat sink i d a p d w thermal resistance-junction to ambient parameter common ratings (t c =25c unless otherwise noted) ? 100v/40a, rds (on) =21m(typ.)@vgs=10v ? super high dense cell design ? 100% avalanche tested ? lead free and green devices available (rohs compliant) ? high speed power switching drain-source voltage v gate-source voltage pin description features applications absolute maximum ratings to251 n-channel mosfet g d s d s g
RU1H35K min. typ. max. bv dss drain-source breakdown voltage 100 v 1 t j =85c 10 v gs(th) gate threshold voltage 2 3 4 v i gss gate leakage current 100 na r ds(on) drain-source on-state resistance 21 25 m v sd diode forward voltage 0.8 1.2 v t rr reverse recovery time 100 ns q rr reverse recovery charge 430 nc r g gate resistance 2.8 c iss input capacitance 2100 c oss output capacitance 250 c rss reverse transfer capacitance 115 t d(on) turn-on delay time 22 t r turn-on rise time 76 t d(off) turn-off delay time 60 t f turn-off fall time 23 q g total gate charge 44 q gs gate-source charge 10 q gd gate-drain charge 20 notes: ruichips semiconductor co., ltd rev. a? apr., 2013 2 www.ruichips.com v ds =v gs , i ds =250a static characteristics symbol parameter test condition RU1H35K unit v gs =0v, i ds =250a i dss zero gate voltage drain current v ds =100v, v gs =0v a electrical characteristics (t c =25c unless otherwise noted) v dd =50v, r l =3, i ds =16a, v gen =10v, r g =4.7 v ds =80v, v gs =10v, i ds =16a pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. limited by t jmax , i as =19a, v dd = 48v, r g = 47 , starting t j = 25c. pulse test ; pulse width 300s, duty cycle 2%. guaranteed by design, not subject to production testing. gate charge characteristics nc ns i sd =16a, v gs =0v i sd =16a, dl sd /dt=100a/s v gs =0v,v ds =0v,f=1mhz v gs =0v, v ds =50v, frequency=1.0mhz pf dynamic characteristics v gs =25v, v ds =0v v gs =10v, i ds =16a diode characteristics
RU1H35K device marking package packaging quantity reel size tape width RU1H35K RU1H35K to251 tube 75 - - ruichips semiconductor co., ltd rev. a? apr., 2013 3 www.ruichips.com ordering and marking information
RU1H35K ruichips semiconductor co., ltd rev. a? apr., 2013 4 www.ruichips.com typical characteristics 0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175 i d - drain current (a) t j - junction temperature ( c) drain current vgs=10v 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 r ds(on) - on - resistance (m ) v gs - gate - source voltage (v) drain current ids=16a 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 p d - power (w) t j - junction temperature ( c) power dissipation 0.01 0.1 1 10 100 0.1 1 10 100 1000 i d - drain current (a) v ds - drain - source voltage (v) safe operation area 10 s 100 s 1ms 10ms dc r ds(on) limited t c =25 c 0.001 0.01 0.1 1 1e -05 0.0001 0.001 0.01 0.1 1 zthjc - thermal response ( c/w) square wave pulse duration (sec) thermal transient impedance single pulse duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse r jc = 1.55 c/w
RU1H35K ruichips semiconductor co., ltd rev. a? apr., 2013 5 www.ruichips.com typical characteristics 0 20 40 60 0 1 2 3 4 5 i d - drain current (a) v ds - drain - source voltage (v) output characteristics 3v 5v vgs=8,9,10v 6v 0 10 20 30 40 50 0 20 40 60 80 r ds(on) - on resistance (m) i d - drain current (a) drain - source on resistance 10v 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 normalized on resistance t j - junction temperature ( c) drain - source on resistance v gs =10v i d =16a t j =25 c rds(on)=21m 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source - drain voltage (v) source - drain diode forward t j =25 c t j =175 c 0 500 1000 1500 2000 2500 3000 1 10 100 1000 c - capacitance (pf) v ds - drain - source voltage (v) capacitance ciss coss crss frequency=1.0mhz 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 v gs - gate - source voltage (v) q g - gate charge (nc) gate charge vds=80v ids=16a
RU1H35K ruichips semiconductor co., ltd rev. a? apr., 2013 6 www.ruichips.com avalanche test circuit and waveforms switching time test circuit and waveforms
RU1H35K ruichips semiconductor co., ltd rev. a? apr., 2013 7 www.ruichips.com package information to251 d1 e1 a1 c a c1 b2 e d l 3xb1 2x e l2 3xb l1 min nom max min nom max a 2.220 2.320 2.420 0.087 0.091 0.095 a1 0.890 1.015 1.140 0.035 0.040 0.045 b 0.550 0.610 0.670 0.022 0.024 0.026 b1 0.760 0.860 0.960 0.030 0.034 0.038 b2 5.200 5.300 5.400 0.205 0.209 0.213 c 0.460 0.515 0.570 0.018 0.020 0.022 c1 0.450 0.500 0.550 0.018 0.020 0.022 d 5.950 6.100 6.250 0.234 0.240 0.246 d1 4.200 4.350 4.500 0.165 0.171 0.177 e 6.400 6.550 6.700 0.252 0.258 0.264 e1 4.750 4.800 4.850 0.187 0.189 0.191 e 2.280 ref 0.090 ref l 8.900 9.200 9.500 0.350 0.362 0.374 l1 1.900 2.095 2.290 0.075 0.082 0.090 l2 0.900 0.950 1.000 0.035 0.037 0.039 symbol mm inch
RU1H35K ruichips semiconductor co., ltd rev. a? apr., 2013 8 www.ruichips.com customer service worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial building, no.207 mei hua road fu tian area shen zhen city, china tel: (86 - 755) 8311 - 5334 fax: (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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